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STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V, 0.43 , 9 A MDmeshTM II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS RDS(on) Type ID (@Tjmax) max 3 2 3 1 STD10NM65N 710 V < 0.48 9A 1 2 STF10NM65N 710 V < 0.48 9 A(1) TO-220 IPAK STP10NM65N 710 V < 0.48 9A STU10NM65N 710 V < 0.48 9A 3 1. Limited only by maximum temperature allowed 1 3 100% avalanche tested 2 DPAK 1 Low input capacitance and gate charge TO-220FP Low gate input resistance Application Figure 1. Internal schematic diagram Switching applications Description This series of devices implements the second generation of MDmeshTM Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STD10NM65N 10NM65N DPAK Tape & reel STF10NM65N 10NM65N TO-220FP Tube STP10NM65N 10NM65N TO-220 Tube STU10NM65N 10NM65N IPAK Tube October 2008 Rev 3 1/17 www.st.co